A new age in microelectronics has begun with the first functional microchip integration of atomically thin, two-dimensional materials with unusual features. At KAUST, the first entirely integrated and functional microprocessor built of unusual two-dimensional materials was created. The innovation shows how 2D materials can enhance the performance and utility of microchip-based technology.
Due to their unique and intriguing physical characteristics, there has been a great deal of interest in such materials for cutting-edge. And new applications since the first synthesis of atomically thin layers of graphite, or graphene, in 2004.
Functional microdevices based on these 2D materials have, however, remained elusive despite two decades of research. Because of the difficulties in producing and managing such delicate thin layers.
A prototype 2D-based microprocessor has now been created and successfully shown by the KAUST-led cooperation. Which was inspired by recent successes in Lanza's group on functioning 2D films.
Our goal, according to Lanza, was to make two-dimensional material-based electronic components. And circuits more technologically capable by starting with traditional silicon-based CMOS microcircuits. Also employing industry-standard semiconductor fabrication methods.
The problem, though, is that atomic impurities and other local flaws present in synthetic 2D materials. They might lead to the failure of nanoscale devices. Additionally, integrating the 2D material inside the microprocessor without harming it is exceedingly challenging.
The study team improved the chip's design to make it simpler to manufacture and reduce the impact of flaws. They achieved this by creating typical complementary metallic oxide silicon (CMOS) transistor on one side of the chip. And feeding links underneath, where the 2D material could be reliably transmitted in tiny pads smaller than 0.25 micrometres in size.
Hexagonal boron nitride, or h-BN, was produced on copper foil, transferred to the microchip using a cold conditions humid procedure, and electrodes were then formed on top using in-house processes for conventional vacuum evaporation and photolithograpy. We were able to create a 55 array of one-transistor, one-memristor cells that were interconnected in a crossbar matrix in this fashion.
Lanza reveals ongoing discussions with leading semiconductor companies to further pursue this groundbreaking discovery. To expand our capabilities, we are exploring the installation of a wafer-scale industrial processing system for 2D materials at KAUST.
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